Edward C. Niehenke was born in Abington, PA, in 1937. He received his BS (1961), MS (1965), and PhD (1997) degrees in electrical engineering from Drexel University, Philadelphia, PA.
From 1961 to 1963 he was with Martin Marietta where he developed microwave transitions for superconducting delay lines and investigated behavior of semiconductor devices at 770K. From 1963 to 1997 he was with Westinghouse/Northrop Grumman in Baltimore, MD, where he was responsible for the development of state of the art RF/microwave/millimeter wave circuits, miniature integrated assemblies, and subsystems. He retired from Northrop Grumman in 1997 as a senior advisory engineer and is now a consultant and lectures on nonlinear circuits and transceiver design.
Niehenke has pioneered the development of innovative RF/microwave/millimeter wave circuits including: super low-noise amplifiers, PIN and Schottky barrier limiters, efficient linear power amplifiers, voltage tunable high Q VCO resonators, electrostatic switch and phase shifters, high power bipolar amplifier with internal matching and subharmonic suppression, silicon carbide wideband frequency multipliers, active PHEMT multiplies, receiver protectors with multi-level STC attenuator, low-noise microstrip voltage controlled and dielectric resonator stabilized oscillators, subharmonic image rejection and image enhanced mixers, planar millimeter wave two axis monopulse transceiver with switchable polarization, and low-phase noise millimeter wave fiber optical links . He recently led the development of state-of-the-art 94 GHz solid-state transmitter and transceiver miniature modules reducing the cost of millimeter wave systems and making them practical. Niehenke's innovations can be found in over 15 operational production systems.
Niehenke holds nine patents, three Westinghouse Trade Secret Awards, one Westinghouse Value Engineering Merit Award, and one George Westinghouse Innovation Award. He has given over 120 presentations at symposia, workshops, IEEE chapter/section meetings, and keynote addresses at conferences. He has authored over 34 papers on RF/microwave/millimeter wave circuits. He was on the faculty of the Johns Hopkins University, teaching electricity and magnetism for three years. As the IEEE Microwave Theory and Techniques Society 1986/87 Distinguished Microwave Lecturer, he gave his lecture “Gallium Arsenide–Key to Modern Microwave Technology” to 70 groups throughout the world. Since 1983 he has been actively teaching linear, nonlinear, and transceiver circuit design for wireless communications to over 3000 professionals throughout the world. Courses include Low-Noise Amplifier, Oscillator, Mixer, Power Amplifier, Receiver, Transmitter, and Integrated Assembly Design. Most recent design course is GaN Power Amplifier Design,
Niehenke is a member of the Microwave and Millimeter Wave Integrated Circuits, Microwave Systems, and Wireless Communications MTT-S Technical Committees. He was the advisor (2010), technical program chairman (1998) and chairman (1986) of the International Microwave Symposia held in Baltimore. He serves as a member of the MTT-S Technical Program Committee since 1983 and is the MTT-S Ombudsman. Niehenke was a member of MTT-S ADCOM for 9 years, was a recipient of the IEEE Centennial and Millennium Medals, MTT-S Distinguished Service Award, is a fellow of the IEEE, and is a registered professional engineer in the State of Maryland.
This lecture introduces attendees to the GaN-transistor, its properties, various structures, including the latest GaN power amplifier (PA) design techniques. The properties of GaN will be presented showing the advantage of these devices over GaAs and Si. GaN HEMT transistors will be shown delineating the various geometries, semiconductor processes and structures with associated performance. Guidelines for reliable operation will be presented considering device junction temperature including thermal management techniques. The nonlinear models of GaN HEMT devices necessary for the CAD of PAs will be presented. Design considerations for both constant amplitude envelope signals as well as the non-constant amplitude envelope signals will be presented. Step-by-step design procedures will be shown for various GaN PA examples including different classes of operation as well as the popular Doherty PA.